Intel and Micron Announce New Memory Technology, 3D XPoint
July 30th, 2015Via: Intel:
The technology is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory.
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Following more than a decade of research and development, 3D XPoint technology was built from the ground up to address the need for non-volatile, high-performance, high-endurance and high-capacity storage and memory at an affordable cost. It ushers in a new class of non-volatile memory that significantly reduces latencies, allowing much more data to be stored close to the processor and accessed at speeds previously impossible for non-volatile storage.
The innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to faster and more efficient read/write processes.
3D XPoint technology will sample later this year with select customers, and Intel and Micron are developing individual products based on the technology.
